The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Dec. 10, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Jia-Rui Lee, Kaohsiung, TW;
Kuo-Ming Wu, Hsinchu, TW;
Yi-Chun Lin, Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823425 (2013.01); H01L 21/823462 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 21/823418 (2013.01); H01L 21/823493 (2013.01); H01L 29/0653 (2013.01); H01L 29/42364 (2013.01);
Abstract
A semiconductor device and a method of forming the same are provided. The semiconductor device includes a transistor and a diode. The transistor includes a first gate region electrically coupled to a gate driver, and a first source region and a first drain region on two sides of the first gate region. The diode includes two terminals coupled between the first drain region of the transistor and a reference voltage. The transistor has a threshold voltage greater than that of the diode.