The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Oct. 15, 2019
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Chao-Kai Hung, Kaohsiung, TW;

Chien-Wei Chang, Kaohsiung, TW;

Ya-Chen Shih, Kaohsiung, TW;

Hung-Jung Tu, Kaohsiung, TW;

Hung-Yi Lin, Kaohsiung, TW;

Cheng-Yuan Kung, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/16 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/29 (2013.01); H01L 24/94 (2013.01); H01L 25/50 (2013.01); H01L 2924/12 (2013.01); H01L 2924/143 (2013.01);
Abstract

A device assembly structure includes a first device and at least one second device. The first device has a first active surface and a first backside surface opposite to the first active surface, and includes a plurality of first electrical contacts disposed adjacent to the first active surface. The second device has a second active surface and a second backside surface opposite to the second active surface, and includes a plurality of second electrical contacts disposed adjacent to the second active surface. The second active surface of the second device faces the first active surface of the first device, the second electrical contacts of the second device are electrically connected to the first electrical contacts of the first device, and a thickness of the second device is less than or equal to one fifth of a thickness of the first device.


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