The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Mar. 25, 2019
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Hidekazu Nakamura, Osaka, JP;

Manabu Yanagihara, Osaka, JP;

Tomohiko Nakamura, Osaka, JP;

Yusuke Katagiri, Kyoto, JP;

Katsumi Otani, Osaka, JP;

Takeshi Kawabata, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 29/20 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 21/52 (2006.01); H01L 23/48 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49513 (2013.01); H01L 21/52 (2013.01); H01L 23/48 (2013.01); H01L 23/4952 (2013.01); H01L 23/49541 (2013.01); H01L 23/49562 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 29/2003 (2013.01); H01L 23/3107 (2013.01); H01L 23/562 (2013.01); H01L 24/45 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/29116 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49109 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/014 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device that is a surface mount-type device includes a nitride semiconductor chip including a silicon substrate having a first thermal expansion coefficient and an InGaAlN layer in contact with a surface of the silicon substrate, where 0≤x≤1, 0≤y≤1, 0≤x+y≤1; and a die pad including Cu and having a second thermal expansion coefficient that is greater than the first thermal expansion coefficient. A thickness of the nitride semiconductor chip is at least 0.2 mm, length L of the nitride semiconductor chip is at least 3.12 mm, and thickness tm of the die pad and length L of the nitride semiconductor chip satisfy tm≥2.00×10×L+0.173, tm being a thickness in mm and L being a length in mm.


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