The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
May. 14, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Fan Huang, Kaohsiung, TW;
Mao-Nan Wang, Hsinchu, TW;
Kuo-Chin Chang, Chiayi, TW;
Hui-Chi Chen, Hsinchu County, TW;
Dian-Hau Chen, Hsinchu, TW;
Yen-Ming Chen, Hsin-Chu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method that includes providing an integrated circuit (IC) substrate having various devices and an interconnection structure that couples the devices to an integrated circuit; forming a first passivation layer on the IC substrate; forming a redistribution layer on the first passivation layer, the redistribution layer being electrically connected to the interconnection structure; forming a second passivation layer on the redistribution layer and the first passivation layer; forming a polyimide layer on the second passivation layer; patterning the polyimide layer, resulting in a polyimide opening in the polyimide layer; and etching the second passivation layer through the polyimide opening using the polyimide layer as an etch mask.