The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jul. 31, 2018
Kobus Sas, Montbonnot-Saint-Martin, FR;
Julien Vitiello, Grenoble, FR;
Fabien Piallat, Montbonnot-Saint-Martin, FR;
Other;
Abstract
A method for depositing a layer of a material onto a substrate, comprising: one gas-phase injection of a first chemical species with a precursor of such insulating material, into a deposition chamber of a chemical vapor deposition reactor, through a first injection path, according to a first pulse sequence; one gas-phase injection of a second chemical species with a reactant adapted to react with such precursor, into the deposition chamber, through a second injection path, according to a second pulse sequence which is phase-shifted relative to the first pulse sequence; one sequential generation of a plasma of the first chemical species and/or the second chemical species during at least one pulse of at least one of the first and second sequences, with such plasma being generated from a high frequency (HF) plasma source and a low frequency (LF) plasma source applied to the first and second injection paths, the low frequency (LF) plasma source power on the high frequency (HF) plasma source power ratio being above 1.