The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jul. 21, 2020
Tokyo Electron Limited, Tokyo, JP;
Sergey Voronin, Albany, NY (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of plasma processing includes generating plasma in a plasma processing chamber containing a first species, a second species, and a substrate. The plasma includes a plasma sheath, first species ions, and second species ions. The first species has a first mass and the second species has a second mass that is less than the first mass. The method further includes applying a pulse train of negative bias pulses to the substrate. Each of the negative bias pulses has a pulse duration less than 10 μs and spatially stratifies the first species ions and the second species ions in the plasma sheath. No bias voltage is applied to the substrate during a pulse delay after each negative bias pulse. The pulse delay is at least five times the pulse duration.