The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Feb. 13, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hirokazu Matsumoto, Asaka, JP;

Ryota Suzuki, Zama, JP;

Makoto Sato, Sagamihara, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 27/092 (2013.01); H01L 29/0642 (2013.01); H01L 29/42356 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01);
Abstract

Apparatuses with a gate electrode in a semiconductor device are described. An example apparatus includes an active region surrounded by an isolation region, and a gate electrode extending in a first direction to pass over the active region. The gate electrode includes a body gate portion over the active region, the body gate portion having a first gate length in a second direction perpendicular to the first direction, a lead-out portion over the isolation region, the lead-out portion having a second gate length in the second direction, the second gate length being greater than the first gate length, and a hammer-head portion having a first end in contact with the body gate portion and a second end opposite to the first end in contact with the hammer-head portion.


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