The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Jan. 25, 2019
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Wei Hu, Toufen Township, Miaoli County, TW;

Teng-Hao Yeh, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/105 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 27/11565 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 29/40117 (2019.08);
Abstract

A memory device and a manufacturing method for the same are provided. The memory device comprises a stack structure and a channel structure. The stack structure is on a substrate and comprises gate electrodes and insulating films stacked alternately. The channel structure is electrically coupled to the gate electrodes, and is on sidewall surfaces of the gate electrodes. The channel structure comprises a first channel structure and a second channel structure. The second channel structure is on an upper surface of the first channel structure. The first channel structure and/or the second channel structure has a ring shape.


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