The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Jan. 09, 2020
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Hsin-Hui Lee, Kaohsiung, TW;
Han-Liang Tseng, Hsinchu, TW;
Jiunn-Liang Yu, Taipei, TW;
Kwang-Ming Lin, Taichung, TW;
Yin Chen, Hsinchu, TW;
Si-Twan Chen, Jhubei, TW;
Hsueh-Jung Lin, Jhubei, TW;
Wen-Chih Lu, New Taipei, TW;
Chih-Hsien Chen, Taoyuan, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.