The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Nov. 18, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yun-Wei Cheng, Taipei, TW;
Yin-Chieh Huang, Tainan, TW;
Chun-Hao Chou, Tainan, TW;
Kuo-Cheng Lee, Tainan, TW;
Hsun-Ying Huang, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract
A method includes depositing a first reflective layer over a substrate. A first dielectric layer is deposited over the first reflective layer. A second dielectric layer is deposited over the first dielectric layer. The second dielectric layer, the first dielectric layer, and the first reflective layer are etched to form a grid isolation structure that defines a recess. The recess is filled with a color filter.