The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Jan. 17, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wen-Hsiung Lu, Tainan, TW;
Hui-Min Huang, Taoyuan, TW;
Ming-Da Cheng, Taoyuan, TW;
Wei-Hung Lin, Xinfeng Township, TW;
Chen-En Yen, Changhua County, TW;
Hsu-Lun Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes bonding a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate and forming a cavity in the first area of the first semiconductor substrate, where forming the cavity comprises: supplying a passivation gas mixture that deposits a passivation layer on a bottom surface and sidewalls of the cavity, where during deposition of the passivation layer, a deposition rate of the passivation layer on the bottom surface of the cavity is the same as a deposition rate of the passivation layer on sidewalls of the cavity; and etching the first area of the first semiconductor substrate using an etching gas, where the etching gas is supplied concurrently with the passivation gas mixture, etching the first area of the first semiconductor substrate comprises etching in a vertical direction at a greater rate than etching in a lateral direction.