The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Jun. 01, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shahaji B. More, Hsinchu, TW;
Cheng-Han Lee, New Taipei, TW;
Zheng-Yang Pan, Zhubei, TW;
Shih-Chieh Chang, Taipei, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 29/10 (2013.01); H01L 29/1054 (2013.01); H01L 29/51 (2013.01); H01L 29/66803 (2013.01); H01L 29/66818 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01); H01L 21/823857 (2013.01);
Abstract
A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.