The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Apr. 01, 2020
International Business Machines Corporation, Armonk, NY (US);
Son Nguyen, Schenectady, NY (US);
Rudy J. Wojtecki, San Jose, CA (US);
Noel Arellano, Gilroy, CA (US);
Alexander Edward Hess, Redwood Estates, NY (US);
Thomas Jasper Haigh, Jr., Claverack, NY (US);
Cornelius Brown Peethala, Slingerlands, NY (US);
Balasubramanian S. Pranatharthi Haran, Watervliet, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.