The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Jun. 10, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Toshifumi Nagaiwa, Hsin-chu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/683 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01J 37/32642 (2013.01); H01L 21/683 (2013.01); H05H 1/46 (2013.01);
Abstract

An apparatus of plasma processing includes a substrate support and a focus ring that are arranged in a chamber. The focus ring surrounds a substrate on the substrate support. The focus ring has a first region and a second region. The first region includes an inner top surface of the focus ring. The second region includes an outer top surface of the focus ring. The inner top surface extends at a position closer to the central axis of the focus ring than the outer top surface. The focus ring is configured such that an absolute value of a negative DC bias potential in the first region becomes greater than an absolute value of a DC potential in the second region during plasma generation in the chamber.


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