The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Oct. 23, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Kuo-Hwa Tzeng, Taipei, TW;
Chih-Hao Wang, Hsinchu County, TW;
Yeur-Luen Tu, Taichung, TW;
Chung-Yi Yu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A silicon-on-insulator (SOI) substrate includes a semiconductor substrate and a multi-layered polycrystalline silicon structure. The multi-layered polycrystalline silicon structure is disposed over the semiconductor substrate. The multi-layered polycrystalline silicon structure includes a plurality of doped polycrystalline silicon layers stacked over one another, and an oxide layer between each adjacent pair of doped polycrystalline silicon layers. A number of the doped polycrystalline silicon layer is ranging from 2 to 6.