The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

May. 23, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Silvia Borsari, Garden City, ID (US);

Stian E. Wood, Meridian, ID (US);

Haoyu Li, Boise, ID (US);

Yiping Wang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 27/0814 (2013.01); H01L 27/1085 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01); H01L 2221/1057 (2013.01);
Abstract

An apparatus comprises a conductive structure, another conductive structure, and a laminate spacer structure interposed between the conductive structure and the another conductive structure in a first direction. The laminate spacer structure comprises a dielectric spacer structure, another dielectric spacer structure, and an additional dielectric spacer structure interposed between the dielectric spacer structure and the another dielectric spacer structure. The additional dielectric spacer structure comprises at least one dielectric material, and gas pockets dispersed within the at least one dielectric material. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.


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