The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Dec. 19, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Alexander Reznicek, Troy, NY (US);
Chun-Chen Yeh, Danbury, CT (US);
Zuoguang Liu, Schenectady, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/823487 (2013.01); H01L 21/823864 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
A semiconductor structure including a bottom source drain region arranged on a substrate, a semiconductor channel region extending vertically upwards from a top surface of the bottom source drain region, a metal gate disposed on and around the semiconductor channel region, and a top source drain region above the semiconductor channel region and comprising a first doped epitaxy region and a second doped epitaxy region.