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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11158635 B1

PDFFull Text
Date of Patent:
Oct. 26, 2021

Filed:

Mar. 27, 2020

Low leakage gate stack for a transistor device and methods of making an ic product that includes such a transistor device

Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Dali Shao, Mechanicville, NY (US);

Tao Chu, Portland, OR (US);

Liqiao Qin, Loudonville, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorney:

Hoffman Warnick LLC

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/28088 (2013.01); H01L 21/823842 (2013.01); H01L 29/4966 (2013.01);
Abstract

One illustrative IC product disclosed herein includes a semiconductor substrate and a first transistor device formed on the semiconductor substrate. The first transistor device comprises a first gate structure. The first gate structure comprises a gate insulation layer, a first layer of titanium nitride (TiN) positioned above the gate insulation layer, a layer of titanium silicon nitride (TiSiN) positioned above the first layer of TiN and a second layer of titanium nitride (TiN) positioned above the layer of TiSiN.

Find Patent Forward Citations

Shao, Dali. (2021). Low leakage gate stack for a transistor device and methods of making an ic product that includes such a transistor device (U.S. Patent No. 11158635). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11158635

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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