The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Jul. 01, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Jui Kuo, Hsinchu, TW;
Ming-Tan Lee, Kaohsiung, TW;
Ting-Yang Yu, Hsinchu, TW;
Shih-Peng Tai, Xinpu Township, TW;
I-Chia Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A device includes a molding compound encapsulating a first integrated circuit die and a second integrated circuit die; a dielectric layer over the molding compound, the first integrated circuit die, and the second integrated circuit die; and a metallization pattern over the dielectric layer and electrically connecting the first integrated circuit die to the second integrated circuit die. The metallization pattern comprises a plurality of conductive lines. Each of the plurality of conductive lines extends continuously from a first region of the metallization pattern through a second region of the metallization pattern to a third region of the metallization pattern; and has a same type of manufacturing anomaly in the second region of the metallization pattern.