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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11158505 B1

PDFFull Text
Date of Patent:
Oct. 26, 2021

Filed:

Dec. 19, 2019

Anti-reflective coating by ion implantation for lithography patterning

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Han Yang, Hsinchu, TW;

Tsung-Han Wu, Hsinchu, TW;

Chih-Wei Chang, Hsinchu, TW;

Hsin-mei Lin, Hsinchu, TW;

I-Chun Hsieh, Hsinchu, TW;

Hsi-Yen Chang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/265 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 21/266 (2006.01); G03F 7/38 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); G03F 7/091 (2013.01); G03F 7/16 (2013.01); G03F 7/2002 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/26 (2013.01); G03F 7/38 (2013.01); H01L 21/0337 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01);
Abstract

A method for lithography patterning includes depositing a target layer over a substrate, the target layer including an inorganic material; implanting ions into the target layer, resulting in an ion-implanted target layer; forming a photoresist layer directly over the ion-implanted target layer; and exposing the photoresist layer to radiation in a photolithography process. The ion-implanted target layer reduces reflection of the radiation back to the photoresist layer during the photolithography process.

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