The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Jun. 18, 2019
Versum Materials Us, Llc, Tempe, AZ (US);
Robert G. Ridgeway, Tempe, AZ (US);
Jennifer Lynn Anne Achtyl, Tempe, AZ (US);
Raymond N. Vrtis, Tempe, AZ (US);
Xinjian Lei, Tempe, AZ (US);
William Robert Entley, Tempe, AZ (US);
Versum Materials US, LLC, Tempe, AZ (US);
Abstract
A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.