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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11152389 B1

PDFFull Text
Date of Patent:
Oct. 19, 2021

Filed:

Apr. 16, 2020

Methods for solving epitaxial growth loading effect at different pattern density regions

Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Zhen Fang, Hubei, CN;

Haihui Huang, Hubei, CN;

Er Jiang Xu, Hubei, CN;

Meng Wang, Hubei, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Attorney:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

Primary Examiner:

Julia Slutsker

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0228 (2013.01); H01L 21/0273 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 27/11556 (2013.01);
Abstract

A method for reducing an epitaxial growth loading effect in a patterned device includes forming a first trench and a second trench in a substrate and in a first insulating layer over the substrate to form a low pattern density region and a high pattern density region. The first trench has a larger cross-sectional area than the second trench. The method further includes isolating the first trench from the second trench by using a first mask. The method further include disposing a second insulating layer in the first trench. The method further includes removing a portion of the first mask in order to expose the second trench. The method further includes growing an epitaxial layer in the second trench.

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