The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Dec. 13, 2018
Hitachi High-technologies Corporation, Tokyo, JP;
Naoki Yasui, Kudamatsu, JP;
Norihiko Ikeda, Hiroshima, JP;
Tooru Aramaki, Kudamatsu, JP;
Yasuhiro Nishimori, Hikari, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.