The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Apr. 06, 2020
Applicant:
Femtometrix, Inc., Irvine, CA (US);
Inventors:
Viktor Koldiaev, Morgan Hill, CA (US);
Marc Kryger, Fountain Valley, CA (US);
John Changala, Tustin, CA (US);
Assignee:
FemtoMetrix, Inc., Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 29/24 (2006.01); G01R 31/308 (2006.01); G01R 31/28 (2006.01); G01N 21/63 (2006.01); G01N 21/88 (2006.01); G01N 21/95 (2006.01); G01N 21/94 (2006.01); G01R 31/265 (2006.01); G01R 31/26 (2020.01); G01N 27/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 29/24 (2013.01); G01N 21/636 (2013.01); G01N 21/8806 (2013.01); G01N 21/94 (2013.01); G01N 21/9501 (2013.01); G01N 27/00 (2013.01); G01R 31/2601 (2013.01); G01R 31/2656 (2013.01); G01R 31/2831 (2013.01); G01R 31/308 (2013.01); H01L 22/12 (2013.01); G01N 2201/06113 (2013.01);
Abstract
Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.