The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Sep. 28, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Mei Hui Tsai, Hsin-Chu, TW;

Hsiao-Yi Wang, Zhunan Township, TW;

Yen-Min Liao, Miaoli, TW;

Po-Sheng Lu, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/04 (2006.01); B08B 3/10 (2006.01); H01L 21/67 (2006.01); H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67057 (2013.01); B08B 3/04 (2013.01); H01L 21/67051 (2013.01); H01L 21/67253 (2013.01); B08B 3/10 (2013.01); H01L 23/60 (2013.01);
Abstract

A method for cleaning a semiconductor substrate is provided. The method includes the steps of: applying a first agent onto a top surface of the semiconductor substrate while the semiconductor substrate is rotated at a first rotational frequency; immersing the semiconductor substrate in a second agent while rotating the semiconductor substrate at a second rotational frequency; and rotating the semiconductor substrate at a third rotational frequency while a third agent is introduced onto the top surface of the semiconductor substrate. The first rotational frequency may be greater than the third rotational frequency and the third rotational frequency is greater than the second rotational frequency. In some embodiments, the second rotational frequency is zero and the semiconductor substrate is held stationary during the immersing step.


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