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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11143961 B1

PDFFull Text
Date of Patent:
Oct. 12, 2021

Filed:

Sep. 29, 2016

Resist composition

Applicant:

The University of Manchester, Manchester, GB;

Inventors:

Scott Lewis, Manchester, GB;

Richard Winpenny, Manchester, GB;

Stephen Yeates, Manchester, GB;

Antonio Fernandez, Manchester, GB;

Assignee:

The University of Manchester, Manchester, GB;

Attorneys:

Nixon Peabody LLP

Linda B. Huber

Primary Examiner:

Duane Smith

Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01); G03F 7/038 (2006.01); G03F 7/031 (2006.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 21/56 (2006.01); G03F 7/004 (2006.01); H05K 3/30 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2061 (2013.01); G03F 7/0042 (2013.01); G03F 7/031 (2013.01); G03F 7/038 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2002 (2013.01); G03F 7/325 (2013.01); H01L 21/0274 (2013.01); H01L 21/56 (2013.01); H01L 21/76895 (2013.01); H01L 21/78 (2013.01); H01L 24/03 (2013.01); H05K 3/303 (2013.01);
Abstract

The present invention relates to resist compostions, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.

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