The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

May. 17, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Junli Wang, Slingerlands, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Huiming Bu, Glenmont, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 21/02115 (2013.01); H01L 21/76897 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A method of providing contact surfaces that includes forming a first mask having an opening to a perimeter of a gate electrode, the first mask having a first protecting portion centrally positioned over the gate electrode within the perimeter, and a second protecting portion of the mask is positioned over metal semiconductor alloy surfaces of source and drain contact surfaces; and recessing exposed portions of metal semiconductor alloy and the gate electrode with an etch. In a following step, the method continues with filling the openings provided by recessing the gate perimeter of the gate electrode, recessing the metal semiconductor alloy adjacent to the gate structure, and the recessed gate electrode adjacent to the metal semiconductor alloy surface of the source and drain contact surfaces with a protecting dielectric material.


Find Patent Forward Citations

Loading…