The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Sep. 24, 2019
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Mark Leonard O'Neill, Queen Creek, AZ (US);

Manchao Xiao, San Diego, CA (US);

Xinjian Lei, Vista, CA (US);

Richard Ho, Anaheim, CA (US);

Haripin Chandra, San Marcos, CA (US);

Matthew R. MacDonald, Laguna Niguel, CA (US);

Meiliang Wang, San Marcos, CA (US);

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C07F 7/10 (2006.01); C23C 16/24 (2006.01); C23C 16/455 (2006.01); C09D 5/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02219 (2013.01); C07F 7/10 (2013.01); C09D 5/24 (2013.01); C23C 16/24 (2013.01); C23C 16/45553 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02598 (2013.01);
Abstract

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.


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