The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Jan. 30, 2020
Tokyo Electron Limited, Tokyo, JP;
Hideki Mizuno, Miyagi, JP;
Yoshinori Suzuki, Shanghai, CN;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for processing substrates includes providing a first substrate including a first region and a second region, the first region including a stack of a silicon oxide film and a silicon nitride film, the second region including a single layer of a silicon oxide film; etching the first substrate with a process gas including a sulfur containing gas, in accordance with varied flow rates of the sulfur containing gas, thereby determining each relationship between a given flow rate from among the varied flow rates of the sulfur containing gas and a shape difference between respective recessed portions formed in the first region and the second region; determining a flow rate of the sulfur containing gas on a basis of each relationship; and etching a second substrate at the determined flow rate of the sulfur containing gas.