The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Dec. 24, 2019
Intel Corporation, Santa Clara, CA (US);
Sagar S. Sidhpura, Folsom, CA (US);
Yogesh B. Wakchaure, Folsom, CA (US);
Aliasgar S. Madraswala, Folsom, CA (US);
Fei Xue, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method and apparatus to reduce read latency and improve read quality of service (Read QoS) for non-volatile memory, such as NAND array in a NAND device. For read commands that collide with an in-progress program array operation targeting the same program locations in a NAND array, the in-progress program is suspended and the controller allows the read command to read from the internal NAND buffer instead of waiting for the in-progress program to complete. For read commands queued during an in-progress program that is processing pre-reads in preparation for a program array operation, pre-read bypass allows the reads to be serviced between the pre-reads and before the program's array operation starts. In this manner, read commands can be serviced without suspending the in-progress program. Allowing internal NAND buffer reads and enabling pre-read bypass reduces read latency and improves Read QoS.