The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Dec. 18, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yun-Yue Lin, Hsinchu, TW;
Hsin-Chang Lee, Hsinchu, TW;
Chia-Jen Chen, Hsinchu, TW;
Chih-Cheng Lin, Kaohsiung, TW;
Anthony Yen, Hsinchu, TW;
Chin-Hsiang Lin, Hsin-chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
A method of performing a lithography process includes receiving a lithography mask and performing overlay measurement. The lithography mask includes a substrate that contains a low thermal expansion material (LTEM); a reflective structure over a first side of the substrate; an absorber layer over the reflective structure and containing one or more first overlay marks; and a conductive layer over a second side of the substrate and containing one or more second overlay marks. The second side is opposite the first side. The overlay measurement includes using the one or more first overlay marks in an extreme ultraviolet (EUV) lithography process or using the one or more second overlay marks in a non-EUV lithography process.