The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Dec. 20, 2019
Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate
Infineon Technologies Ag, Neubiberg, DE;
Moriz Jelinek, Villach, AT;
Kang Nan Khor, Nibong Tebal, MY;
Armin Schieber, Villach, AT;
Michael Stadtmueller, Villach, AT;
Wei-Lin Sun, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate is described. The method includes: generating the trench in the semiconductor substrate; generating an oxide layer over opposing sidewalls of the trench; damaging at least a portion of the oxide layer by ion implantation; coating the oxide layer with an etching mask; generating at least one opening in the etching mask adjacent to one of the opposing sidewalls; and partly removing the oxide layer by etching the oxide layer beneath the etching mask down to an etching depth at the one of the opposing sidewalls by introducing an etching agent into the opening.