The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Mar. 13, 2020
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Yongji Mao, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
A method of making MIM capacitors includes: forming well regions in a semiconductor substrate, forming a gate dielectric layer on the semiconductor substrate, forming a polysilicon gate structure on a surface of the well region, forming a dummy gate on the gate dielectric layer and removing the dummy gate to expose the gate dielectric layer, and forming a metal gate structure on the exposed gate dielectric layer, wherein the metal gate structure comprises an electrode barrier layer on the gate dielectric layer and a metal gate on the gate dielectric layer. A lower electrode plate of the MIM capacitor is formed in the process of forming the metal gate structure, forming a capacitor dielectric layer above the lower electrode plate, and forming an upper electrode plate on the capacitor dielectric layer. Manufacturing of the MIM capacitor can be integrated in the process of manufacturing the semiconductor integrated circuit.