The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Aug. 22, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Zhen Geng, Hsinchu, TW;
Kitchun Kwong, Hsinchu, TW;
Taicheng Shieh, Hsinchu, TW;
Bo-Shiuan Shie, Hsinchu, TW;
Po-Nien Chen, Miaoli County, TW;
Chih-Yung Lin, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A structure and formation method of a semiconductor device is provided. The method includes forming a first, a second, a third, and a fourth fin structures over a substrate. The method also includes forming a first spacer layer over sidewalls of the first and the second fin structures. The method further includes forming a second spacer layer over the first spacer layer and sidewalls of the third and the fourth fin structures. In addition, the method includes forming a first blocking fin between the first and the second fin structures. The first blocking fin is separated from the first fin structure by portions of the first spacer layer and the second spacer layer. The method includes forming a second blocking fin between the third and the fourth fin structures. The second blocking fin is separated from the third fin structure by a portion of the second spacer layer.