The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
May. 17, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventor:
Su-Horng Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/45 (2006.01); H01L 23/522 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/76831 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 29/45 (2013.01);
Abstract
A method of fabricating a semiconductor device includes: forming a trench on an insulating layer to expose a first conductive feature disposed under the insulating layer; forming a barrier layer over the insulating layer, a sidewall of the trench, and the first conductive feature; etching a bottom of the barrier layer to expose the first conductive feature; and forming a second conductive feature over an exposed portion of the first conductive feature.