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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11127623 B1

PDFFull Text
Date of Patent:
Sep. 21, 2021

Filed:

Dec. 07, 2018

Single diffusion cut for gate structures

Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Hui Zang, Guilderland, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Jessica M. Dechene, Watervliet, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:

Francois Pagette

Andrew M. Calderon

Roberts Calderon Safran & Cole, P.C.

Primary Examiner:

Daniel Whalen

Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 21/3086 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to single diffusion cut for gate structures and methods of manufacture. The structure includes a single diffusion break extending into a substrate between diffusion regions of adjacent gate structures, the single diffusion break filled with an insulator material and further comprising an undercut region lined with a liner material which is between the insulator material and the diffusion regions.

Find Patent Forward Citations

Zang, Hui. (2021). Single diffusion cut for gate structures (U.S. Patent No. 11127623). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11127623

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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