The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
May. 31, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ya-Ching Chang, Hsinchu, TW;
Ching-Yu Chang, Yilang County, TW;
Chin-Hsiang Lin, Hsin-Chu, TW;
Yen-Hao Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.