The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Dec. 10, 2018
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
WonJin Choi, Cheonan, KR;
JunHwan Ji, Cheonan, KR;
UiSung Jung, Cheonan, KR;
JungHan Kim, Cheonan, KR;
YoungJung Lee, Cheonan, KR;
ChanRae Cho, Cheonan, KR;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); H01L 21/02 (2006.01); C30B 33/08 (2006.01); C30B 33/02 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C30B 33/02 (2013.01); C30B 33/08 (2013.01); H01L 21/02013 (2013.01); H01L 21/324 (2013.01);
Abstract
A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer. The method involves subjected a single crystal silicon ingot to an anneal prior to wafer slicing.