The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Mar. 01, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Aspects of the disclosure provide a method for fabricating a semiconductor device. A pre-stress liner is formed over a structure. The structure includes a gate structure having sidewalls. A protection layer is formed. The protection layer covers a first portion of the pre-stress liner that extends along the sidewalls of the gate structure, and exposes a second portion of the pre-stress liner that is away from the sidewalls of the gate structure. An oxygen-containing layer is formed. The oxygen-containing layer covers the pre-stress liner and the protection layer. The oxygen-containing layer is separated from the first portion of the pre-stress liner by the protection layer. The structure is annealed such that the second portion of the pre-stress liner oxidizes by receiving oxygen from the oxygen-containing layer, while the first portion of the pre-stress liner remains unoxidized due to the protection layer.