The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Dec. 02, 2019
Infineon Technologies Ag, Neubiberg, DE;
Andreas Meiser, Sauerlach, DE;
Caspar Leendertz, Munich, DE;
Anton Mauder, Kolbermoor, DE;
Roland Rupp, Lauf, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a silicon carbide semiconductor body including a source region of a first conductivity type, a body region of a second conductivity type, shielding regions of the second conductivity type and compensation regions of the second conductivity type. Trench structures extend from a first surface into the silicon carbide semiconductor body along a vertical direction. Each of the trench structures includes an auxiliary electrode at a bottom of the trench structure and a gate electrode between the auxiliary electrode and the first surface. The auxiliary electrode is electrically insulated from the gate electrode. The auxiliary electrode of each of the trench structures is adjoined by at least one of the shielding regions at the bottom of the trench structure. Each of the shielding regions is adjoined by at least one of the compensation regions at the bottom of the shielding region.