The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Nov. 20, 2018
Applicant:

Toyota Motor Engineering & Manufacturing North America, Inc., Plano, TX (US);

Inventors:

Shailesh N. Joshi, Ann Arbor, MI (US);

Naoya Take, Canton, MI (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/473 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4735 (2013.01); H01L 21/4871 (2013.01); H01L 23/49838 (2013.01);
Abstract

Embodiments described herein generally relate to an electronics assembly that includes a semiconductor device, a substrate layer, a first mesh layer and a second mesh layer. Jet channels that have a first inner diameter are disposed within the substrate layer. The first mesh layer includes a first plurality of pores that have a perimeter opening. The second mesh layer includes a second plurality of pores that have a second inner diameter. The jet channels, the first and the second plurality of pores are concentric to create a fluid path for a fluid to impinge a first device surface of the semiconductor device. The second inner diameter is smaller than the perimeter opening and the first inner diameter of the substrate layer such that a cooling fluid velocity increases when flowing from the substrate layer through the second mesh layer.


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