The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jan. 10, 2020
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Franck Julien, La Penne sur Huveaun, FR;
Frédéric Chairat, Saint maximin la ste, FR;
Noémie Blanc, Pourrieres, FR;
Emmanuel Blot, Seillons Source d'Argens, FR;
Philippe Roux, Marseilles, FR;
Gerald Theret, Aix-en-Provence, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Abstract
A method can be used for fabricating first and second semiconductor regions separated by isolating trenches. A semiconductor substrate is covered with silicon nitride. The silicon nitride situated above the first region is doped by ion implantation. Trenches are etched through the silicon nitride and the doped silicon nitride is partially etching in an isotropic manner. The trenches are filled with an insulator to a level situated above that of the first region. The silicon nitride is removed resulting in the edges of the first region only being covered with an insulator annulus.