The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Mar. 28, 2019
Denso Corporation, Kariya, JP;
Shinichirou Yanagi, Kariya, JP;
Yusuke Nonaka, Kariya, JP;
Seiji Noma, Kariya, JP;
Shinya Sakurai, Kariya, JP;
Shogo Ikeura, Kariya, JP;
Atsushi Kasahara, Kariya, JP;
Shin Takizawa, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a semiconductor substrate having a diode formation region; an upper diffusion region of a first conductivity type provided on a surface layer of a main surface of the semiconductor substrate in the diode formation region; and a lower diffusion region of a second conductivity type provided at a position deeper than the upper diffusion region with respect to the main surface in a depth direction of the semiconductor substrate, the lower diffusion region having a higher impurity concentration as compared to the semiconductor substrate. The lower diffusion region provides a PN joint surface with the upper diffusion region at a position deeper than the main surface, and has a maximum point indicating a maximum concentration in an impurity concentration profile of the lower diffusion region in the diode formation region.