The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Mar. 16, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ming-Hong Chang, Hsinchu, TW;
Chih-Yuan Chan, Kaohsiung, TW;
Shen-Ping Wang, Keelung, TW;
Chung-Cheng Chen, Toufen, TW;
Chien-Li Kuo, Hsinchu, TW;
Po-Tao Chu, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A group III-V device structure is provided. The group III-V device structure includes a channel layer formed over a substrate and an active layer formed over the channel layer. The group III-V device structure also includes a gate structure formed over the active layer and a source electrode and a drain electrode formed over the active layer. The source electrode and the drain electrode are formed on opposite sides of the gate structure. The group III-V device structure further includes a through via structure formed through the channel layer, the active layer and a portion of the substrate, and the through via structure is electrically connected to the source electrode or the drain electrode.