The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Oct. 22, 2018
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Ryuji Norimoto, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/78 (2006.01); H01L 21/3065 (2006.01); H01L 21/683 (2006.01); H01L 21/304 (2006.01); H01L 21/268 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/0273 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 21/6836 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01);
Abstract

A wafer processing method is a method of dividing a wafer in which a functional layer is laminated to a top surface of a substrate and a plurality of devices are formed, along streets dividing the plurality of devices. The wafer processing method includes: a protective member disposing step of disposing an adhesive tape on the functional layer side of a top surface of the wafer; a cutting step of forming, along the streets, a cut groove having a depth exceeding a finished thickness of the wafer by making a cutting blade cut into an undersurface of the wafer; and a plasma etching step of extending the cut groove toward the top surface of the wafer and dividing the substrate along the streets by plasma-etching, from an undersurface side, the wafer whose adhesive tape side is held by a chuck table.


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