The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Jan. 16, 2017
Applicant:

Kobus Sas, Montbonnot-Saint-Martin, FR;

Inventors:

Julien Vitiello, Grenoble, FR;

Fabien Piallat, Montbonnot-Saint-Martin, FR;

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); C23C 16/44 (2006.01); C23C 16/34 (2006.01); C25D 3/38 (2006.01); C25D 5/02 (2006.01); C25D 7/12 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); C23C 16/34 (2013.01); C23C 16/4405 (2013.01); C23C 16/45523 (2013.01); C25D 3/38 (2013.01); C25D 5/02 (2013.01); C25D 7/123 (2013.01); H01L 21/76852 (2013.01); H01L 23/481 (2013.01); H01L 23/53238 (2013.01);
Abstract

The invention relates to a method for producing an interconnection comprising a via (V) extending through a substrate (), said method successively comprising: (a) the deposition of a layer () of titanium nitride or tantalum nitride on a main surface (A) of the substrate and on the inner surface (A,B) of at least one hole () extending into at least part of the thickness of said substrate; (b) the deposition of a layer () of copper on said layer () of titanium nitride or tantalum nitride; and (c) the filling of the hole () with copper, said method being characterized in that, during step (a), the substrate () is arranged in a first deposition chamber (), and in that said step (a) comprises the injection of a titanium or tantalum precursor in a gaseous phase into the deposition chamber via a first injection path according to a first pulse sequence, and the injection of a nitrogen-containing reactive gas into the deposition chamber via a second injection path different from the first injection path according to a second pulse sequence, the first pulse sequence and the second pulse sequence being dephased.


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