The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
May. 10, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Dewei Xu, Clifton Park, NY (US);
Sunil K. Singh, Mechanicville, NY (US);
Siva R. Dangeti, Rexford, NY (US);
Seung-Yeop Kook, Mechanicville, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/283 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/0217 (2013.01); H01L 21/283 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01);
Abstract
Embodiments of the disclosure provide a capacitor structure for an integrated circuit (IC), and methods to form the capacitor structure. The capacitor structure may include: a first ring electrode in an inter-level dielectric (ILD) layer on a substrate; an inner electrode positioned within the first ring electrode; and a capacitor dielectric separating the first ring electrode and the inner electrode, and separating a bottom surface of the inner electrode from the ILD layer.