The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Oct. 08, 2018
Applicants:

United Microelectronics Corp., Hsin-Chu, TW;

Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;

Inventors:

Kai-Lou Huang, New Taipei, TW;

Fu-Che Lee, Taichung, TW;

Feng-Yi Chang, Tainan, TW;

Chieh-Te Chen, Kaohsiung, TW;

Meng-Chia Tsai, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/53295 (2013.01); H01L 27/10852 (2013.01);
Abstract

A capacitor structure includes a substrate having thereon a storage node contact, a cylinder-shaped bottom electrode disposed on the storage node contact, a supporting structure horizontally supporting a sidewall of the cylinder-shaped bottom electrode, a capacitor dielectric layer conformally covering the cylinder-shaped bottom electrode and the supporting structure, and a top electrode covering the capacitor dielectric layer. The supporting structure has a top surface that is higher than that of the cylinder-shaped bottom electrode. The top surface of the supporting structure has a V-shaped sectional profile.


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