The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Sep. 28, 2017
Intel Corporation, Santa Clara, CA (US);
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Tristan A. Tronic, Aloha, OR (US);
Rajat K. Paul, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Group III-V semiconductor fuses and their methods of fabrication are described. In an example, a fuse includes a gallium nitride layer on a substrate. An oxide layer is disposed in a trench in the gallium nitride layer. A first contact is on the gallium nitride layer on a first side of the trench, the first contact comprising indium, gallium and nitrogen. A second contact is on the gallium nitride layer on a second side of the trench, the second side opposite the first side, the second contact comprising indium, gallium and nitrogen. A filament is over the oxide layer in the trench, the filament coupled to the first contact and to the second contact wherein the filament comprises indium, gallium and nitrogen.