The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Sep. 20, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsiang-Wei Liu, Tainan, TW;

Wei-Chen Chu, Taichung, TW;

Chia-Tien Wu, Taichung, TW;

Tai-I Yang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76807 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 21/0276 (2013.01); H01L 21/31116 (2013.01);
Abstract

The present disclosure provides an interconnect structure, including a first metal line, a conductive contact over the first metal line, including a first portion, a second portion over the first portion, wherein a bottom width of the second portion is greater than a top width of the first portion, and a third portion over the second portion, wherein a bottom width of the third portion is greater than a top width of the second portion, a sacrificial bilayer, including a first sacrificial layer, wherein a first portion of the first sacrificial layer is under a coverage of a vertical projection area of the first portion of the conductive contact, and a second sacrificial layer over the first sacrificial layer, and a dielectric layer over a top surface of the second sacrificial layer.


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